SIDR668 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 23.2A/95A PPAK
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.8 mOhm | 3.4 V | 20 V | 108 nC | 100 V | -55 °C | 150 °C | PowerPAK® SO-8DC | N-Channel | 23.2 A 95 A | MOSFET (Metal Oxide) | Surface Mount | 5400 pF | 6.25 W 125 W | PowerPAK® SO-8 | 10 V | 7.5 V |