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GD25LQ16ENEGR
Integrated Circuits (ICs)

GD25LQ16ENEGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

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GD25LQ16ENEGR
Integrated Circuits (ICs)

GD25LQ16ENEGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

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Technical Specifications

Parameters and characteristics for this part

SpecificationGD25LQ16ENEGR
Access Time6 ns
Clock Frequency133 MHz
Memory FormatFLASH
Memory InterfaceQPI, SPI - Quad I/O
Memory Organization [custom]2 M
Memory Organization [custom]8
Memory Size2 MB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-UDFN Exposed Pad
Supplier Device Package8-USON (3x4)
TechnologyFLASH - NOR (SLC)
Voltage - Supply [Max]2.1 V
Voltage - Supply [Min]1.65 V
Write Cycle Time - Word, Page [custom]100 µs
Write Cycle Time - Word, Page [custom]4 ms
PartPackage / CaseMemory FormatMemory SizeTechnologyMounting TypeVoltage - Supply [Max]Voltage - Supply [Min]Clock FrequencyMemory Organization [custom]Memory Organization [custom]Supplier Device PackageOperating Temperature [Max]Operating Temperature [Min]Memory InterfaceWrite Cycle Time - Word, Page [custom]Write Cycle Time - Word, Page [custom]Memory TypePackage / CaseAccess TimePackage / CasePackage / Case
GD25LQ16C8IGR
GigaDevice Semiconductor (HK) Limited
8-XFLGA Exposed Pad
FLASH
2 MB
FLASH - NOR
Surface Mount
2.1 V
1.65 V
104 MHz
2 M
8
8-LGA
85 C
-40 ¯C
SPI - Quad I/O
50 µs
2.4 ms
Non-Volatile
8-SOIC
GigaDevice Semiconductor (HK) Limited
8-SOIC
FLASH
2 MB
FLASH - NOR (SLC)
Surface Mount
2.1 V
1.65 V
133 MHz
2 M
8
8-SOP
85 C
-40 ¯C
QPI
SPI - Quad I/O
60 µs
2.4 ms
Non-Volatile
0.209 in
5.3 mm
6 ns
8-USON
GigaDevice Semiconductor (HK) Limited
8-UDFN Exposed Pad
FLASH
2 MB
FLASH - NOR
Surface Mount
2.1 V
1.65 V
104 MHz
2 M
8
8-USON (4x3)
85 C
-40 ¯C
SPI - Quad I/O
50 µs
2.4 ms
Non-Volatile
GD25LQ05CTIGR
GigaDevice Semiconductor (HK) Limited
8-SOIC
FLASH
2 MB
FLASH - NOR (SLC)
Surface Mount
2.1 V
1.65 V
133 MHz
2 M
8
8-SOP
85 C
-40 ¯C
QPI
SPI - Quad I/O
60 µs
2.4 ms
Non-Volatile
6 ns
0.154 in
3.9 mm
GD25LQ16ENEGR
GigaDevice Semiconductor (HK) Limited
8-UDFN Exposed Pad
FLASH
2 MB
FLASH - NOR (SLC)
Surface Mount
2.1 V
1.65 V
133 MHz
2 M
8
8-USON (3x4)
125 °C
-40 °C
QPI
SPI - Quad I/O
100 µs
4 ms
Non-Volatile
6 ns
GD25LQ05CTIGR
GigaDevice Semiconductor (HK) Limited
8-SOIC
FLASH
2 MB
FLASH - NOR (SLC)
Surface Mount
2.1 V
1.65 V
133 MHz
2 M
8
8-SOP
105 °C
-40 °C
QPI
SPI - Quad I/O
60 µs
2.4 ms
Non-Volatile
6 ns
0.154 in
3.9 mm
GD25LQ05CTIGR
GigaDevice Semiconductor (HK) Limited
8-SOIC
FLASH
2 MB
FLASH - NOR (SLC)
Surface Mount
2.1 V
1.65 V
133 MHz
2 M
8
8-SOP
105 °C
-40 °C
QPI
SPI - Quad I/O
60 µs
2.4 ms
Non-Volatile
6 ns
0.154 in
3.9 mm
8-WDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited
8-WDFN Exposed Pad
FLASH
2 MB
FLASH - NOR
Surface Mount
2.1 V
1.65 V
104 MHz
2 M
8
8-WSON (5x6)
85 C
-40 ¯C
SPI - Quad I/O
50 µs
2.4 ms
Non-Volatile
GD25LQ16ENAGR
GigaDevice Semiconductor (HK) Limited
8-UDFN Exposed Pad
FLASH
2 MB
FLASH - NOR (SLC)
Surface Mount
2.1 V
1.65 V
133 MHz
2 M
8
8-USON (3x4)
125 °C
-40 °C
QPI
SPI - Quad I/O
100 µs
4 ms
Non-Volatile
6 ns
GD25LQ16EWIGY
GigaDevice Semiconductor (HK) Limited
8-WDFN Exposed Pad
FLASH
2 MB
FLASH - NOR (SLC)
Surface Mount
2.1 V
1.65 V
133 MHz
2 M
8
8-WSON (5x6)
85 C
-40 ¯C
QPI
SPI - Quad I/O
60 µs
2.4 ms
Non-Volatile
6 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.76
Tape & Reel (TR) 3000$ 0.76
6000$ 0.74

Description

General part information

GD25LQ16 Series

FLASH - NOR (SLC) Memory IC 16Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 8-USON (3x4)

Documents

Technical documentation and resources

No documents available