GD25LQ16 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 16MBIT SPI/QUAD 8LGA
| Part | Package / Case | Memory Format | Memory Size | Technology | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency | Memory Organization [custom] | Memory Organization [custom] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Type | Package / Case | Access Time | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 8-XFLGA Exposed Pad | FLASH | 2 MB | FLASH - NOR | Surface Mount | 2.1 V | 1.65 V | 104 MHz | 2 M | 8 | 8-LGA | 85 C | -40 ¯C | SPI - Quad I/O | 50 µs | 2.4 ms | Non-Volatile | ||||
GigaDevice Semiconductor (HK) Limited | 8-SOIC | FLASH | 2 MB | FLASH - NOR (SLC) | Surface Mount | 2.1 V | 1.65 V | 133 MHz | 2 M | 8 | 8-SOP | 85 C | -40 ¯C | QPI SPI - Quad I/O | 60 µs | 2.4 ms | Non-Volatile | 0.209 in 5.3 mm | 6 ns | ||
GigaDevice Semiconductor (HK) Limited | 8-UDFN Exposed Pad | FLASH | 2 MB | FLASH - NOR | Surface Mount | 2.1 V | 1.65 V | 104 MHz | 2 M | 8 | 8-USON (4x3) | 85 C | -40 ¯C | SPI - Quad I/O | 50 µs | 2.4 ms | Non-Volatile | ||||
GigaDevice Semiconductor (HK) Limited | 8-SOIC | FLASH | 2 MB | FLASH - NOR (SLC) | Surface Mount | 2.1 V | 1.65 V | 133 MHz | 2 M | 8 | 8-SOP | 85 C | -40 ¯C | QPI SPI - Quad I/O | 60 µs | 2.4 ms | Non-Volatile | 6 ns | 0.154 in | 3.9 mm | |
GigaDevice Semiconductor (HK) Limited | 8-UDFN Exposed Pad | FLASH | 2 MB | FLASH - NOR (SLC) | Surface Mount | 2.1 V | 1.65 V | 133 MHz | 2 M | 8 | 8-USON (3x4) | 125 °C | -40 °C | QPI SPI - Quad I/O | 100 µs | 4 ms | Non-Volatile | 6 ns | |||
GigaDevice Semiconductor (HK) Limited | 8-SOIC | FLASH | 2 MB | FLASH - NOR (SLC) | Surface Mount | 2.1 V | 1.65 V | 133 MHz | 2 M | 8 | 8-SOP | 105 °C | -40 °C | QPI SPI - Quad I/O | 60 µs | 2.4 ms | Non-Volatile | 6 ns | 0.154 in | 3.9 mm | |
GigaDevice Semiconductor (HK) Limited | 8-SOIC | FLASH | 2 MB | FLASH - NOR (SLC) | Surface Mount | 2.1 V | 1.65 V | 133 MHz | 2 M | 8 | 8-SOP | 105 °C | -40 °C | QPI SPI - Quad I/O | 60 µs | 2.4 ms | Non-Volatile | 6 ns | 0.154 in | 3.9 mm | |
GigaDevice Semiconductor (HK) Limited | 8-WDFN Exposed Pad | FLASH | 2 MB | FLASH - NOR | Surface Mount | 2.1 V | 1.65 V | 104 MHz | 2 M | 8 | 8-WSON (5x6) | 85 C | -40 ¯C | SPI - Quad I/O | 50 µs | 2.4 ms | Non-Volatile | ||||
GigaDevice Semiconductor (HK) Limited | 8-UDFN Exposed Pad | FLASH | 2 MB | FLASH - NOR (SLC) | Surface Mount | 2.1 V | 1.65 V | 133 MHz | 2 M | 8 | 8-USON (3x4) | 125 °C | -40 °C | QPI SPI - Quad I/O | 100 µs | 4 ms | Non-Volatile | 6 ns | |||
GigaDevice Semiconductor (HK) Limited | 8-WDFN Exposed Pad | FLASH | 2 MB | FLASH - NOR (SLC) | Surface Mount | 2.1 V | 1.65 V | 133 MHz | 2 M | 8 | 8-WSON (5x6) | 85 C | -40 ¯C | QPI SPI - Quad I/O | 60 µs | 2.4 ms | Non-Volatile | 6 ns |