Discrete Semiconductor Products

SQ2351ES-T1_BE3

Obsolete

MOSFET P-CH 20V 3.2A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 3.2A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2351ES-T1_BE3

Current - Continuous Drain (Id) (Tc)	3.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	5.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	330 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max)	115 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Mounting Type	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Qualification	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Rds On (Max)	Grade	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)
Vishay Dale SQ2351ES-T1_BE3	Surface Mount	12 V	MOSFET (Metal Oxide)	-55 °C	175 °C	3.2 A	P-Channel	AEC-Q101	SOT-23-3 (TO-236)	330 pF	SC-59 SOT-23-3 TO-236-3	115 mOhm	Automotive	1.5 V	5.5 nC	20 V	2 W	2.5 V	4.5 V
Vishay Dale SQ2351ES-T1_GE3	Surface Mount	12 V	MOSFET (Metal Oxide)	-55 °C	175 °C	3.2 A	P-Channel	AEC-Q101	SOT-23-3 (TO-236)	330 pF	SC-59 SOT-23-3 TO-236-3	115 mOhm	Automotive	1.5 V	5.5 nC	20 V	2 W	2.5 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 20 V 3.2A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources