SQ2351 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 3.2A SOT23-3
| Part | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Grade | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Vgs (Max) | Qualification | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 3.2 A | P-Channel | 330 pF | Surface Mount | Automotive | 115 mOhm | 5.5 nC | 20 V | 2.5 V 4.5 V | SOT-23-3 (TO-236) | 2 W | 1.5 V | 12 V | AEC-Q101 | SC-59 SOT-23-3 TO-236-3 |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 3.2 A | P-Channel | 330 pF | Surface Mount | Automotive | 115 mOhm | 5.5 nC | 20 V | 2.5 V 4.5 V | SOT-23-3 (TO-236) | 2 W | 1.5 V | 12 V | AEC-Q101 | SC-59 SOT-23-3 TO-236-3 |