Discrete Semiconductor Products

SIR662DP-T1-GE3

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MOSFET N-CH 60V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR662DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	96 nC
Input Capacitance (Ciss) (Max) @ Vds	4365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIR662DP-T1-GE3	2.7 mOhm	4365 pF	6.25 W 104 W	PowerPAK® SO-8	96 nC	4.5 V 10 V	Surface Mount	2.5 V	60 V	N-Channel	60 A	PowerPAK® SO-8	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V

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General part information

N-Channel 60 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources