SIR662 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 60V 60A PPAK SO-8
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.7 mOhm | 4365 pF | 6.25 W 104 W | PowerPAK® SO-8 | 96 nC | 4.5 V 10 V | Surface Mount | 2.5 V | 60 V | N-Channel | 60 A | PowerPAK® SO-8 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V |