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STMicroelectronics-STW6N95K5 MOSFETs Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-247 Tube
Discrete Semiconductor Products

STGW60V60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 60 A VERY HIGH SPEED

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STMicroelectronics-STW6N95K5 MOSFETs Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-247 Tube
Discrete Semiconductor Products

STGW60V60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 60 A VERY HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW60V60DF
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)240 A
Gate Charge334 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]375 W
Reverse Recovery Time (trr)74 ns
Supplier Device PackageTO-247-3
Switching Energy750 µJ, 550 µJ
Td (on/off) @ 25°C60 ns, 208 ns
Test Condition4.7 Ohm, 60 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 600$ 1.91
DigikeyN/A 2$ 4.77
NewarkEach 1$ 6.22
10$ 5.17
25$ 4.11
50$ 3.88
100$ 3.64
250$ 3.30

Description

General part information

STGW60V60DF Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.