Discrete Semiconductor Products

STP75NS04Z

Obsolete

STMicroelectronics

MOSFET N-CH 33V 80A TO220AB

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DocumentsDatasheet

Discrete Semiconductor Products

STP75NS04Z

Obsolete

STMicroelectronics

MOSFET N-CH 33V 80A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP75NS04Z

Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	Clamped
Vgs(th) (Max) @ Id	4 V

STP75 Series

N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package

Part	Mounting Type	FET Type	Technology	Vgs (Max) [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
STMicroelectronics STP75NS04Z	Through Hole	N-Channel	MOSFET (Metal Oxide)	Clamped	TO-220	1860 pF	11 mOhm	4 V	175 °C	-55 °C	110 W	50 nC	10 V	TO-220-3
STMicroelectronics STP75NF75	Through Hole	N-Channel	MOSFET (Metal Oxide)		TO-220		11 mOhm	4 V	175 °C	-55 °C	300 W	160 nC	10 V	TO-220-3	20 V	3700 pF	75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.97

Description

General part information

STP75 Series

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

Documents

Technical documentation and resources