Discrete Semiconductor Products
FDMC86260
ActiveON Semiconductor
N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 150V, 25A, 34MΩ
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Discrete Semiconductor Products
FDMC86260
ActiveON Semiconductor
N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 150V, 25A, 34MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC86260 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A, 5.4 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 2.3 W, 54 W |
| Rds On (Max) @ Id, Vgs | 34 mOhm |
| Supplier Device Package | Power33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.20 | |
| 10 | $ 2.09 | |||
| 100 | $ 1.45 | |||
| 500 | $ 1.18 | |||
| 1000 | $ 1.09 | |||
| Digi-Reel® | 1 | $ 3.20 | ||
| 10 | $ 2.09 | |||
| 100 | $ 1.45 | |||
| 500 | $ 1.18 | |||
| 1000 | $ 1.09 | |||
| Tape & Reel (TR) | 3000 | $ 1.03 | ||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 1.31 | |
| 6000 | $ 1.25 | |||
| 12000 | $ 1.12 | |||
| 18000 | $ 1.08 | |||
| 30000 | $ 1.04 | |||
| ON Semiconductor | N/A | 1 | $ 0.95 | |
Description
General part information
FDMC86260 Series
This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Documents
Technical documentation and resources