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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PSMN3R5-40YSDX

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Freescale Semiconductor - NXP

N-CHANNEL 40 V, 3.5 MΩ, 120 A STANDARD LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PSMN3R5-40YSDX

Active
Freescale Semiconductor - NXP

N-CHANNEL 40 V, 3.5 MΩ, 120 A STANDARD LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN3R5-40YSDX
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds3245 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-669, SC-100
Power Dissipation (Max)115 W
Rds On (Max) @ Id, Vgs3.5 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.44
10$ 1.18
100$ 0.92
500$ 0.78
Digi-Reel® 1$ 1.44
10$ 1.18
100$ 0.92
500$ 0.78
Tape & Reel (TR) 1500$ 0.34
3000$ 0.30
7500$ 0.28
10500$ 0.27

Description

General part information

PSMN3R5 Series

120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.