Discrete Semiconductor Products
FDMS030N06B
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 100A, 3MΩ
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Discrete Semiconductor Products
FDMS030N06B
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 100A, 3MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS030N06B |
|---|---|
| Current - Continuous Drain (Id) @ 25¯C | 100 A, 22.1 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 75 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7560 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) @ Id, Vgs | 3 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.39 | |
| 10 | $ 2.90 | |||
| 100 | $ 2.05 | |||
| 500 | $ 1.69 | |||
| 1000 | $ 1.59 | |||
| Digi-ReelÛ | 1 | $ 4.39 | ||
| 10 | $ 2.90 | |||
| 100 | $ 2.05 | |||
| 500 | $ 1.69 | |||
| 1000 | $ 1.59 | |||
| Tape & Reel (TR) | 3000 | $ 1.59 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 4.75 | |
| 10 | $ 3.59 | |||
| 25 | $ 3.35 | |||
| ON Semiconductor | N/A | 1 | $ 1.46 | |
Description
General part information
FDMS030N06B Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Documents
Technical documentation and resources