FDMS030N06B Series

N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ

Part	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25¯C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type
ON Semiconductor FDMS030N06B	-20 V	3 mOhm	60 V	4.5 V	2.5 W	104 W	75 nC	8-PowerTDFN	Surface Mount	10 V	MOSFET (Metal Oxide)	22.1 A 100 A	-55 °C	150 °C	8-PQFN (5x6)	7560 pF	N-Channel

Catalog

N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ

Key Features

• RDS(on)= 2.4 mΩ ( Typ.) @ VGS= 10 V, ID= 50 A

• Advanced Package and Silicon Combination for Low RDS(on)and High Efficiency

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.