Discrete Semiconductor Products

SSM3K315T(TE85L,F)

Obsolete

MOSFET N-CH 30V 6A TSM

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 6A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K315T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	700 mW
Rds On (Max) @ Id, Vgs	27.6 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)
Toshiba Semiconductor and Storage SSM3K315T(TE85L,F)	450 pF	TSM	MOSFET (Metal Oxide)	700 mW	SC-59 SOT-23-3 TO-236-3	30 V	6 A	4.5 V 10 V	2.5 V	27.6 mOhm	150 °C	N-Channel	10.1 nC	Surface Mount	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 30 V 6A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources