SSM3K315 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 30V 6A TSM
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Technology | Power Dissipation (Max) [Max] | Package / Case | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 450 pF | TSM | MOSFET (Metal Oxide) | 700 mW | SC-59 SOT-23-3 TO-236-3 | 30 V | 6 A | 4.5 V 10 V | 2.5 V | 27.6 mOhm | 150 °C | N-Channel | 10.1 nC | Surface Mount | 20 V |