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SB540-E3/51
Discrete Semiconductor Products

GP30M-E3/54

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SB540-E3/51
Discrete Semiconductor Products

GP30M-E3/54

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGP30M-E3/54
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-201AD, Axial
Reverse Recovery Time (trr)5 µs
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-201AD
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.20
10$ 0.98
100$ 0.76
500$ 0.65
Tape & Reel (TR) 1400$ 0.53
2800$ 0.50
7000$ 0.47
9800$ 0.45

Description

General part information

GP30 Series

Diode 1000 V 3A Through Hole DO-201AD

Documents

Technical documentation and resources