GP30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO201AD
| Part | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Speed | Speed | Current - Average Rectified (Io) | Grade | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Mounting Type | Current - Reverse Leakage @ Vr | Supplier Device Package | Technology | Qualification | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 200 V |
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 800 V |
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 1000 V |
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 200 V |
Vishay General Semiconductor - Diodes Division | 5 µs | 1.2 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 100 V |
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | 1000 V | ||
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 400 V |
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 600 V |
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | 200 V | ||
Vishay General Semiconductor - Diodes Division | 5 µs | 1.1 V | Standard Recovery >500ns | 200 mA | 3 A | Automotive | 175 ░C | -65 C | DO-201AD Axial | Through Hole | 5 µA | DO-201AD | Standard | AEC-Q101 | 800 V |