Discrete Semiconductor Products

SISS46DN-T1-GE3

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MOSFET N-CH 100V 12.5/45.3A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 12.5/45.3A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS46DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12.5 A, 45.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5 W, 65.7 W
Rds On (Max) @ Id, Vgs	12.8 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Vishay General Semiconductor - Diodes Division SISS46DN-T1-GE3	42 nC	20 V	5 W 65.7 W	Surface Mount	3.4 V	PowerPAK® 1212-8S	12.8 mOhm	PowerPAK® 1212-8S	12.5 A 45.3 A	10 V	7.5 V	2140 pF	100 V	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel

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General part information

N-Channel 100 V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources