SISS46 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 12.5/45.3A PPAK
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Power Dissipation (Max) | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 42 nC | 20 V | 5 W 65.7 W | Surface Mount | 3.4 V | PowerPAK® 1212-8S | 12.8 mOhm | PowerPAK® 1212-8S | 12.5 A 45.3 A | 10 V | 7.5 V | 2140 pF | 100 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | N-Channel |