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PowerPAK 1212-8W
Discrete Semiconductor Products

SQS484CENW-T1_GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 40V 16A PPAK 1212-8W

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PowerPAK 1212-8W
Discrete Semiconductor Products

SQS484CENW-T1_GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 40V 16A PPAK 1212-8W

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQS484CENW-T1_GE3
Current - Continuous Drain (Id) @ 25°C16 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds2350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8W
Power Dissipation (Max) [Max]62.5 W
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackagePowerPAK® 1212-8W
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.82
10$ 0.71
100$ 0.49
500$ 0.41
1000$ 0.35
Digi-Reel® 1$ 0.82
10$ 0.71
100$ 0.49
500$ 0.41
1000$ 0.35
Tape & Reel (TR) 3000$ 0.31
6000$ 0.30
9000$ 0.27
30000$ 0.27

Description

General part information

SQS484 Series

N-Channel 40 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W

Documents

Technical documentation and resources