Discrete Semiconductor Products

SQS484EN-T1_BE3

Obsolete

MOSFET N-CH 40V 16A 1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 16A 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQS484EN-T1_BE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1855 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max) [Max]	62 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Grade	FET Type	Package / Case
Vishay General Semiconductor - Diodes Division SQS484EN-T1_GE3	MOSFET (Metal Oxide)	PowerPAK® 1212-8	39 nC	1855 pF	40 V	2.5 V	4.5 V 10 V	-55 °C	175 ░C	AEC-Q101	16 A	Surface Mount	62 W	9 mOhm	20 V	Automotive	N-Channel	PowerPAK® 1212-8
Vishay General Semiconductor - Diodes Division SQS484EN-T1_BE3	MOSFET (Metal Oxide)	PowerPAK® 1212-8	39 nC	1855 pF	40 V	2.5 V	4.5 V 10 V	-55 °C	175 ░C	AEC-Q101	16 A	Surface Mount	62 W	9 mOhm	20 V	Automotive	N-Channel	PowerPAK® 1212-8
Vishay General Semiconductor - Diodes Division SQS484ENW-T1_GE3	MOSFET (Metal Oxide)	PowerPAK® 1212-8	35 nC	1800 pF	40 V	2.5 V	4.5 V 10 V	-55 °C	175 ░C	AEC-Q101	16 A	Surface Mount	62.5 W	8 mOhm	20 V	Automotive	N-Channel	PowerPAK® 1212-8
Vishay General Semiconductor - Diodes Division SQS484CENW-T1_GE3	MOSFET (Metal Oxide)	PowerPAK® 1212-8W	40 nC	2350 pF	40 V	2.5 V	4.5 V 10 V	-55 °C	175 ░C		16 A	Surface Mount	62.5 W	9.5 mOhm	20 V		N-Channel	PowerPAK® 1212-8W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available