Discrete Semiconductor Products

SIHG20N50E-GE3

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MOSFET N-CH 500V 19A TO247AC

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Discrete Semiconductor Products

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MOSFET N-CH 500V 19A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG20N50E-GE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1640 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs [Max]	184 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIHG20N50C-E3	MOSFET (Metal Oxide)	N-Channel	270 mOhm	20 A	Through Hole	500 V	TO-247-3	76 nC	TO-247AC	10 V	2942 pF	250 W	-55 °C	150 °C	30 V	5 V
Vishay General Semiconductor - Diodes Division SIHG20N50E-GE3	MOSFET (Metal Oxide)	N-Channel		19 A	Through Hole	500 V	TO-247-3	92 nC	TO-247AC	10 V		179 W	-55 °C	150 °C	30 V	4 V	184 mOhm	1640 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 19A (Tc) 179W (Tc) Through Hole TO-247AC

Technical documentation and resources