SIHG20 Series

Catalog

MOSFET N-CH 500V 20A TO247AC

Part	Technology	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIHG20N50C-E3	MOSFET (Metal Oxide)	N-Channel	270 mOhm	20 A	Through Hole	500 V	TO-247-3	76 nC	TO-247AC	10 V	2942 pF	250 W	-55 °C	150 °C	30 V	5 V
Vishay General Semiconductor - Diodes Division SIHG20N50E-GE3	MOSFET (Metal Oxide)	N-Channel		19 A	Through Hole	500 V	TO-247-3	92 nC	TO-247AC	10 V		179 W	-55 °C	150 °C	30 V	4 V	184 mOhm	1640 pF