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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N1890 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 0.01 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 800 mW |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 20.22 | |
| Microchip Direct | N/A | 1 | $ 21.77 | |
| Newark | Each | 100 | $ 20.22 | |
| 500 | $ 19.44 | |||
Description
General part information
2N1890-Transistor Series
This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.The device packages for the encapsulated device types are as follows: (2N1711 and 2N1890) Three terminal round metal can TO-205AD (formerly TO-39) and TO-205-AA (formerly TO-5).
Documents
Technical documentation and resources