Specification	STY60NM50

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	266 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	560 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	MAX247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STY60NM50 Series

N-Channel 500V - 0.045 Ohm - 60A Max247(TM) Zener-Protected MDmesh(TM) Power MOSFET

Part	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	FET Type	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STY60NM50	50 mOhm	TO-247-3	7500 pF	266 nC	5 V	150 °C	60 A	MOSFET (Metal Oxide)	30 V	N-Channel	MAX247™	560 W	Through Hole	500 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	375	$ 21.36
Newark	Each	1	$ 20.00
		10	$ 19.99
		25	$ 18.19
		60	$ 18.10
		120	$ 17.76
		270	$ 17.42
		510	$ 17.08

Description

General part information

STY60NM50 Series

The MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESHTMhorizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products.