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SQ-MELF
Discrete Semiconductor Products

1N6628U/TR

Active
Microchip Technology

660V UFR,FRR SQ SMT TR B-BODY SQ. MELF ROHS COMPLIANT: YES

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SQ-MELF
Discrete Semiconductor Products

1N6628U/TR

Active
Microchip Technology

660V UFR,FRR SQ SMT TR B-BODY SQ. MELF ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N6628U/TR
Capacitance @ Vr, F40 pF
Current - Average Rectified (Io)1.75 A
Current - Reverse Leakage @ Vr2 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseSQ-MELF, B
Reverse Recovery Time (trr)45 ns
Speed200 mA, 500 ns
Supplier Device PackageSQ-MELF, B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]660 V
PartMounting TypeSupplier Device PackageReverse Recovery Time (trr)Capacitance @ Vr, FTechnologyCurrent - Average Rectified (Io)Voltage - DC Reverse (Vr) (Max) [Max]Package / CaseOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Current - Reverse Leakage @ VrSpeedVoltage - Forward (Vf) (Max) @ IfGradeQualification
SQ-MELF
Microchip Technology
Surface Mount
B
SQ-MELF
45 ns
40 pF
Standard
1.75 A
660 V
B
SQ-MELF
150 °C
-65 C
2 µA
200 mA
500 ns
JANxxxxx
Microchip Technology
Through Hole
A
Axial
45 ns
Standard
1.75 A
600 V
A
Axial
150 °C
-65 C
2 µA
200 mA
500 ns
SQ-MELF
Microchip Technology
Surface Mount
B
SQ-MELF
45 ns
40 pF
Standard
1.75 A
660 V
B
SQ-MELF
150 °C
-65 C
2 µA
200 mA
500 ns
1N5806TR
Microchip Technology
Through Hole
A
Axial
45 ns
Standard
1.75 A
600 V
A
Axial
150 °C
-65 C
2 µA
200 mA
500 ns
SQ-MELF, A PKG
Microchip Technology
Surface Mount
A-MELF
30 ns
40 pF
Standard
1.75 A
660 V
150 °C
-65 C
2 µA
200 mA
500 ns
Microchip Technology-GRP-ABC-JANTX1N6117AUS Transient Voltage Suppressors (TVS) TVS Diode Single Bi-Dir 22.8V 500W 2-Pin E-MELF Bag
Microchip Technology
Surface Mount
D-5B
45 ns
40 pF
Standard
2.3 A
600 V
E
SQ-MELF
150 °C
-65 C
2 µA
200 mA
500 ns
1.5 V
Microchip Technology
Through Hole
30 ns
Standard
1.75 A
660 V
E
Axial
175 ░C
-65 C
2 µA
200 mA
500 ns
1.35 V
Military
MIL-PRF-19500/590
E-MELF PKG
Microchip Technology
Surface Mount
D-5B
30 ns
40 pF
Standard
1.75 A
660 V
E
SQ-MELF
150 °C
-65 C
2 µA
200 mA
500 ns
Military
MIL-PRF-19500/590

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 16.38
Microchip DirectN/A 1$ 17.64
NewarkEach (Supplied on Full Reel) 100$ 16.38
500$ 15.75

Description

General part information

JAN1N6628US-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6626US thru 1N6631US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources