Discrete Semiconductor Products

SI2306BDS-T1-GE3

Active

MOSFET N-CH 30V 3.16A SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 3.16A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2306BDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	47 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Package / Case	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI2306BDS-T1-GE3	4.5 nC	-55 °C	150 °C	20 V	N-Channel	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	3 V	47 mOhm	Surface Mount	30 V	3.16 A	305 pF	SOT-23-3 (TO-236)	4.5 V 10 V	750 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources