SI2306 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 3.16A SOT23-3
| Part | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | FET Type | Package / Case | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.5 nC | -55 °C | 150 °C | 20 V | N-Channel | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 3 V | 47 mOhm | Surface Mount | 30 V | 3.16 A | 305 pF | SOT-23-3 (TO-236) | 4.5 V 10 V | 750 mW |