Discrete Semiconductor Products

STN1HNK60

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STMicroelectronics

N-CHANNEL 600 V, 7.3 OHM TYP., 1 A SUPERMESH POWER MOSFET IN A SOT-223 PACKAGE

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DocumentsDS12594 AN2344 +17

Discrete Semiconductor Products

STN1HNK60

Active

STMicroelectronics

N-CHANNEL 600 V, 7.3 OHM TYP., 1 A SUPERMESH POWER MOSFET IN A SOT-223 PACKAGE

Deep-Dive with AI

DocumentsDS12594 AN2344 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STN1HNK60

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	156 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.3 W
Rds On (Max) @ Id, Vgs	8.5 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

STN1HNK60 Series

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in a SOT-223 package

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STN1HNK60	400 mA	3.3 W	600 V	150 °C	-55 °C	SOT-223	3.7 V	Surface Mount	TO-261-4 TO-261AA	N-Channel	30 V	10 nC	10 V	MOSFET (Metal Oxide)	8.5 Ohm	156 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	4000	$ 0.40
Digikey	N/A	3639	$ 1.42
Newark	Each (Supplied on Cut Tape)	1	$ 1.40
		10	$ 1.07
		25	$ 0.88
		50	$ 0.73
		100	$ 0.61

Description

General part information

STN1HNK60 Series

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.