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STWA65N60DM6
Discrete Semiconductor Products

STWA65N60DM6

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STMicroelectronics

N-CHANNEL 600 V, 60 MOHM TYP., 46 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA65N60DM6
Discrete Semiconductor Products

STWA65N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 60 MOHM TYP., 46 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA65N60DM6
Current - Continuous Drain (Id) @ 25°C38 A
Drain to Source Voltage (Vdss)600 V
FET TypeN-Channel
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 35$ 7.42
NewarkEach 1$ 7.29

Description

General part information

STWA65N60DM6 Series

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.