Integrated Circuits (ICs)

MP1907AGQ-Z

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100V, 2.5A, HIGH FREQUENCY, HALF-BRIDGE GATE DRIVERS

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Integrated Circuits (ICs)

Active

100V, 2.5A, HIGH FREQUENCY, HALF-BRIDGE GATE DRIVERS

Technical Specifications

Parameters and characteristics for this part

Specification	MP1907AGQ-Z

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.5 A
Current - Peak Output (Source, Sink) [custom]	2.5 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	100 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.4 V, 1 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 C
Package / Case	10-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]	12 ns
Rise / Fall Time (Typ) [custom]	9 ns
Supplier Device Package	10-QFN (3x3)
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	4.5 V

Part	Gate Type	Supplier Device Package	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Logic Voltage - VIL, VIH	Voltage - Supply [Max]	Voltage - Supply [Min]	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Driven Configuration	Channel Type	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Monolithic Power Systems Inc. MP1907AGQ-Z	MOSFET (N-Channel) N-Channel MOSFET	10-QFN (3x3)	10-VFDFN Exposed Pad	2.5 A	2.5 A	Surface Mount	1 V 2.4 V	18 V	4.5 V	100 V	-40 C	125 °C	Non-Inverting	Half-Bridge	Independent	2	12 ns	9 ns
Monolithic Power Systems Inc. MP1907GQ-Z	MOSFET (N-Channel) N-Channel MOSFET	10-QFN (3x3)	10-VFDFN Exposed Pad	2.5 A	2.5 A	Surface Mount	1 V 2.4 V	18 V	4.5 V	100 V	-40 C	125 °C	Non-Inverting	Half-Bridge	Independent	2	12 ns	9 ns
Monolithic Power Systems Inc. MP1907GQ-P	MOSFET (N-Channel) N-Channel MOSFET	10-QFN (3x3)	10-VFDFN Exposed Pad	2.5 A	2.5 A	Surface Mount	1 V 2.4 V	18 V	4.5 V	100 V	-40 C	125 °C	Non-Inverting	Half-Bridge	Independent	2	12 ns	9 ns
Monolithic Power Systems Inc. MP1907AGQ-P	MOSFET (N-Channel) N-Channel MOSFET	10-QFN (3x3)	10-VFDFN Exposed Pad	2.5 A	2.5 A	Surface Mount	1 V 2.4 V	18 V	4.5 V	100 V	-40 C	125 °C	Non-Inverting	Half-Bridge	Independent	2	12 ns	9 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Drives N-channel MOSFET half-bridge

100V VBST voltage range

On-chip bootstrap diode

Technical documentation and resources