Discrete Semiconductor Products

SSM5H12TU(TE85L,F)

Obsolete

MOSFET N-CH 30V 1.9A UFV

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 1.9A UFV

Technical Specifications

Parameters and characteristics for this part

Specification	SSM5H12TU(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.9 nC
Input Capacitance (Ciss) (Max) @ Vds	123 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD (5 Leads), Flat Leads
Power Dissipation (Max)	500 mW
Supplier Device Package	UFV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	FET Feature	Operating Temperature	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case
Toshiba Semiconductor and Storage SSM5H12TU(TE85L,F)	Schottky Diode (Isolated)	150 °C	500 mW	123 pF	1.8 V 4 V	30 V	Surface Mount	1 V	MOSFET (Metal Oxide)	1.9 A	12 V	UFV	N-Channel	1.9 nC	6-SMD (5 Leads) Flat Leads

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 30 V 1.9A (Ta) 500mW (Ta) Surface Mount UFV

Technical documentation and resources