SSM5H12 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 30V 1.9A UFV
| Part | FET Feature | Operating Temperature | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Schottky Diode (Isolated) | 150 °C | 500 mW | 123 pF | 1.8 V 4 V | 30 V | Surface Mount | 1 V | MOSFET (Metal Oxide) | 1.9 A | 12 V | UFV | N-Channel | 1.9 nC | 6-SMD (5 Leads) Flat Leads |