STGW50H65DFB2-4
ActiveTRENCH GATE FIELD-STOP, 650 V, 50 A, HIGH-SPEED HB2 SERIES IGBT IN A TO247-4 PACKAGE
STGW50H65DFB2-4
ActiveTRENCH GATE FIELD-STOP, 650 V, 50 A, HIGH-SPEED HB2 SERIES IGBT IN A TO247-4 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW50H65DFB2-4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 86 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 151 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power - Max [Max] | 272 W |
| Reverse Recovery Time (trr) | 92 ns |
| Supplier Device Package | TO-247-4 |
| Switching Energy | 629 µJ, 478 µJ |
| Td (on/off) @ 25°C [custom] | 128 ns |
| Td (on/off) @ 25°C [custom] | 18 ns |
| Test Condition | 400 V, 12 Ohm, 50 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW50H65DFB2-4 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Documents
Technical documentation and resources