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onsemi-NTSB40200CTT4G Rectifiers Diode Schottky 200V 40A 3-Pin(2+Tab) D2PAK T/R
Discrete Semiconductor Products

AFGB40T65SQDN

Active
ON Semiconductor

TRANS IGBT CHIP N-CH 650V 80A 238W 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

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onsemi-NTSB40200CTT4G Rectifiers Diode Schottky 200V 40A 3-Pin(2+Tab) D2PAK T/R
Discrete Semiconductor Products

AFGB40T65SQDN

Active
ON Semiconductor

TRANS IGBT CHIP N-CH 650V 80A 238W 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

SpecificationAFGB40T65SQDN
Current - Collector (Ic) (Max) [Max]80 A
Gate Charge76 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]238 W
QualificationAEC-Q101
Reverse Recovery Time (trr)131 ns
Supplier Device PackageTO-263 (D2PAK)
Switching Energy858 µJ, 229 µJ
Td (on/off) @ 25°C75.2 ns, 17.6 ns
Test Condition40 A, 15 V, 400 V, 6 Ohm
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.23
10$ 4.39
100$ 3.55
Digi-Reel® 1$ 5.23
10$ 4.39
100$ 3.55
Tape & Reel (TR) 800$ 3.16
1600$ 2.70
2400$ 2.55
NewarkEach (Supplied on Cut Tape) 1$ 6.80
10$ 5.32
25$ 5.30
50$ 4.85
100$ 4.38
250$ 4.37
500$ 4.25
1600$ 3.99
ON SemiconductorN/A 1$ 2.61

Description

General part information

AFGB40T65SQDN Series

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.