AFGB40T65SQDN Series

IGBT, 650V FS4 High speed version, for OBC application in D2pak

Catalog

IGBT, 650V FS4 High speed version, for OBC application in D2pak

Part	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Switching Energy	Grade	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Test Condition	Gate Charge
ON Semiconductor AFGB40T65SQDN	131 ns	2.1 V	AEC-Q101	-55 °C	175 ░C	238 W	229 µJ 858 µJ	Automotive	650 V	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	80 A	17.6 ns 75.2 ns	6 Ohm 15 V 40 A 400 V	76 nC

Catalog

IGBT, 650V FS4 High speed version, for OBC application in D2pak

Key Features

• AEC-Q101 qualified

• VCE(sat) = 1.6 V (typ.) @ IC = 40 A

• Low VF soft recovery co-packaged diode

Description

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.