STD3NK50ZT4
ActiveN-CHANNEL 500 V, 2.8 OHM TYP., 2.3 A SUPERMESH POWER MOSFET IN A DPAK PACKAGE
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STD3NK50ZT4
ActiveN-CHANNEL 500 V, 2.8 OHM TYP., 2.3 A SUPERMESH POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD3NK50ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 280 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 3.3 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
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Description
General part information
STD3NK50ZT4 Series
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources