Discrete Semiconductor Products

IPD60R3K3C6

Obsolete

INFINEON

MOSFET N-CH 600V 1.7A TO252-3

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Discrete Semiconductor Products

IPD60R3K3C6

Obsolete

INFINEON

MOSFET N-CH 600V 1.7A TO252-3

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60R3K3C6

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	93 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	18.1 W
Rds On (Max) @ Id, Vgs	3.3 Ohm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD60R Series

Part	Technology	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPD60R1K0CEAUMA1	MOSFET (Metal Oxide)	Surface Mount	61 W	-40 °C	150 °C	6.8 A	1 Ohm	10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3-344	600 V	20 V	280 pF	13 nC
INFINEON IPD60R600C6ATMA1	MOSFET (Metal Oxide)	Surface Mount	63 W	-55 °C	150 °C	7.3 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V			600 mOhm	20.5 nC	440 pF
INFINEON IPD60R520C6BTMA1	MOSFET (Metal Oxide)	Surface Mount	66 W	-55 °C	150 °C	8.1 A	520 mOhm	10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V		23.4 nC			512 pF
INFINEON IPD60R380C6ATMA1	MOSFET (Metal Oxide)	Surface Mount	83 W	-55 °C	150 °C	10.6 A	380 mOhm	10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	700 pF	32 nC
INFINEON IPD60R3K3C6	MOSFET (Metal Oxide)	Surface Mount	18.1 W	-55 °C	150 °C	1.7 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	93 pF	4.6 nC	3.3 Ohm
INFINEON IPD60R2K0PFD7SAUMA1	MOSFET (Metal Oxide)	Surface Mount	20 W	-40 °C	150 °C	3 A		10 V	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3-344	600 V	20 V	134 pF		2 Ohm	3.8 nC
INFINEON IPD60R1K0PFD7SAUMA1	MOSFET (Metal Oxide)	Surface Mount	26 W	-40 °C	150 °C	4.7 A		10 V	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	230 pF		1 Ohm	6 nC
INFINEON IPD60R280P7SE8228AUMA1	MOSFET (Metal Oxide)	Surface Mount	53 W	-40 °C	150 °C	12 A		10 V	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V		18 nC	280 mOhm
INFINEON IPD60R2K1CEBTMA1	MOSFET (Metal Oxide)	Surface Mount	22 W	-40 °C	150 °C	2.3 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V		6.7 nC	2.1 Ohm		140 pF
INFINEON IPD60R950C6ATMA1	MOSFET (Metal Oxide)	Surface Mount	37 W	-55 °C	150 °C	4.4 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	280 pF	13 nC	950 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IPD60R Series

N-Channel 600 V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3

Documents

Technical documentation and resources