Discrete Semiconductor Products

IPD60R600C6ATMA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 600 MOHM;

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Discrete Semiconductor Products

IPD60R600C6ATMA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 600 MOHM;

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60R600C6ATMA1

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.5 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD60R Series

Part	Technology	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPD60R1K0CEAUMA1	MOSFET (Metal Oxide)	Surface Mount	61 W	-40 °C	150 °C	6.8 A	1 Ohm	10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3-344	600 V	20 V	280 pF	13 nC
INFINEON IPD60R600C6ATMA1	MOSFET (Metal Oxide)	Surface Mount	63 W	-55 °C	150 °C	7.3 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V			600 mOhm	20.5 nC	440 pF
INFINEON IPD60R520C6BTMA1	MOSFET (Metal Oxide)	Surface Mount	66 W	-55 °C	150 °C	8.1 A	520 mOhm	10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V		23.4 nC			512 pF
INFINEON IPD60R380C6ATMA1	MOSFET (Metal Oxide)	Surface Mount	83 W	-55 °C	150 °C	10.6 A	380 mOhm	10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	700 pF	32 nC
INFINEON IPD60R3K3C6	MOSFET (Metal Oxide)	Surface Mount	18.1 W	-55 °C	150 °C	1.7 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	93 pF	4.6 nC	3.3 Ohm
INFINEON IPD60R2K0PFD7SAUMA1	MOSFET (Metal Oxide)	Surface Mount	20 W	-40 °C	150 °C	3 A		10 V	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3-344	600 V	20 V	134 pF		2 Ohm	3.8 nC
INFINEON IPD60R1K0PFD7SAUMA1	MOSFET (Metal Oxide)	Surface Mount	26 W	-40 °C	150 °C	4.7 A		10 V	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	230 pF		1 Ohm	6 nC
INFINEON IPD60R280P7SE8228AUMA1	MOSFET (Metal Oxide)	Surface Mount	53 W	-40 °C	150 °C	12 A		10 V	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V		18 nC	280 mOhm
INFINEON IPD60R2K1CEBTMA1	MOSFET (Metal Oxide)	Surface Mount	22 W	-40 °C	150 °C	2.3 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V		6.7 nC	2.1 Ohm		140 pF
INFINEON IPD60R950C6ATMA1	MOSFET (Metal Oxide)	Surface Mount	37 W	-55 °C	150 °C	4.4 A		10 V	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	PG-TO252-3	600 V	20 V	280 pF	13 nC	950 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.99
		10	$ 1.27
		100	$ 0.86
		500	$ 0.68
		1000	$ 0.63
	Digi-Reel®	1	$ 1.99
		10	$ 1.27
		100	$ 0.86
		500	$ 0.68
		1000	$ 0.63
	N/A	6169	$ 0.79
	Tape & Reel (TR)	2500	$ 0.54
Newark	Each	1	$ 1.31
		10	$ 0.94
		100	$ 0.70
		500	$ 0.60
		1000	$ 0.56
		2500	$ 0.50

Description

General part information

IPD60R Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Documents

Technical documentation and resources