Discrete Semiconductor Products

BUK9D120-60PX

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60 V, P-CHANNEL TRENCH MOSFET

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DocumentsThermal performance of DFN packages plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body +9

Discrete Semiconductor Products

BUK9D120-60PX

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Nexperia USA Inc.

60 V, P-CHANNEL TRENCH MOSFET

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9D120-60PX

Current - Continuous Drain (Id) @ 25°C	3 A, 8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	713 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	2.3 W, 15 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

BUK9D120-60P Series

60 V, P-channel Trench MOSFET

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Technology	Qualification	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. BUK9D120-60PX	20 V	713 pF	2.5 V	2.3 W 15 W	175 °C	-55 °C	60 V	P-Channel	6-UDFN Exposed Pad	MOSFET (Metal Oxide)	AEC-Q101	DFN2020MD-6	4.5 V 10 V	Automotive	18 nC	Surface Mount	3 A 8 A	120 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.20

Description

General part information

BUK9D120-60P Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.