Specification	STW62N65M5

Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	142 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	6420 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	330 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW62N65M5 Series

Automotive-grade N-channel 650 V, 0.041 Ohm typ., 46 A MDmesh M5 Power MOSFET in a TO-247 package

Part	Vgs (Max)	Qualification	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Grade	FET Type	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STW62N65M5	25 V	AEC-Q101	650 V	5 V	10 V	Through Hole	TO-247-3	142 nC	150 °C	Automotive	N-Channel	330 W	TO-247-3	49 mOhm	6420 pF	MOSFET (Metal Oxide)	46 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 14.00
Newark	Each	1	$ 16.46
		10	$ 15.45
		25	$ 14.85
		50	$ 14.25
		100	$ 13.66
		250	$ 13.54
		500	$ 13.42

Description

General part information

STW62N65M5 Series

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.