
Discrete Semiconductor Products
HN1B04FU-Y,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP + NPN BIPOLAR TRANSISTOR, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)
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Discrete Semiconductor Products
HN1B04FU-Y,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP + NPN BIPOLAR TRANSISTOR, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)
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Technical Specifications
Parameters and characteristics for this part
| Specification | HN1B04FU-Y,LF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 125 ¯C |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Power - Max [Max] | 200 mW |
| Supplier Device Package | US6 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
HN1B04FU Series
Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)
| Part | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Frequency - Transition | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Vce Saturation (Max) @ Ib, Ic | Package / Case | Mounting Type | Transistor Type | Operating Temperature | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 mA | 120 | 100 nA | 50 V | US6 | 150 MHz | 200 mW | 250 mV | 300 mV | 6-TSSOP SC-88 SOT-363 | Surface Mount | 1 NPN 1 PNP | 125 ¯C | ||||
Toshiba Semiconductor and Storage | 150 mA | 100 nA | 50 V | US6 | 150 MHz | 200 mW | 6-TSSOP SC-88 SOT-363 | Surface Mount | 1 NPN 1 PNP | 125 ¯C | 250 mV | 200 hFE | |||||
Toshiba Semiconductor and Storage | 150 mA | 100 nA | 50 V | US6 | 120 MHz 150 MHz | 200 mW | 250 mV | 300 mV | 6-TSSOP SC-88 SOT-363 | Surface Mount | 1 NPN 1 PNP | 200 hFE | AEC-Q101 | Automotive | |||
Toshiba Semiconductor and Storage | 150 mA | 120 | 100 nA | 50 V | US6 | 120 MHz 150 MHz | 200 mW | 250 mV | 300 mV | 6-TSSOP SC-88 SOT-363 | Surface Mount | 1 NPN 1 PNP | AEC-Q101 | Automotive |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 11554 | $ 0.23 | |
Description
General part information
HN1B04FU Series
Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)
Documents
Technical documentation and resources