Specification	HN1B04FU-GR,LXHF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	150 MHz, 120 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Qualification	AEC-Q101
Supplier Device Package	US6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

HN1B04FU Series

Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Vce Saturation (Max) @ Ib, Ic	Package / Case	Mounting Type	Transistor Type	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Qualification	Grade
Toshiba Semiconductor and Storage HN1B04FU-Y,LF	150 mA	120	100 nA	50 V	US6	150 MHz	200 mW	250 mV	300 mV	6-TSSOP SC-88 SOT-363	Surface Mount	1 NPN 1 PNP	125 ¯C
Toshiba Semiconductor and Storage HN1B04FU-GR,LF	150 mA		100 nA	50 V	US6	150 MHz	200 mW			6-TSSOP SC-88 SOT-363	Surface Mount	1 NPN 1 PNP	125 ¯C	250 mV	200 hFE
Toshiba Semiconductor and Storage HN1B04FU-GR,LXHF	150 mA		100 nA	50 V	US6	120 MHz 150 MHz	200 mW	250 mV	300 mV	6-TSSOP SC-88 SOT-363	Surface Mount	1 NPN 1 PNP			200 hFE	AEC-Q101	Automotive
Toshiba Semiconductor and Storage HN1B04FU-Y,LXHF	150 mA	120	100 nA	50 V	US6	120 MHz 150 MHz	200 mW	250 mV	300 mV	6-TSSOP SC-88 SOT-363	Surface Mount	1 NPN 1 PNP				AEC-Q101	Automotive