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TO-220AB PKG
Discrete Semiconductor Products

IRF530NPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 17 A, 0.09 OHM, TO-220AB, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsIR Part Numbering SystemDatasheet+1
TO-220AB PKG
Discrete Semiconductor Products

IRF530NPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 17 A, 0.09 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsIR Part Numbering SystemDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF530NPBF
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]920 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]70 W
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 14234$ 0.98
Tube 1$ 1.43
10$ 0.90
100$ 0.60
500$ 0.47
1000$ 0.43
2000$ 0.39
5000$ 0.35
10000$ 0.34
NewarkEach 1$ 1.32
10$ 1.03
100$ 0.75
500$ 0.63
1000$ 0.58
4000$ 0.55
10000$ 0.50

Description

General part information

IRF530 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.