Discrete Semiconductor Products

IRF530NSTRLPBF

Active

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 90 MOHM;

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 90 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF530NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	920 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	3.8 W, 70 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
INFINEON IRF530NSTRLPBF	920 pF	3.8 W 70 W	100 V	4 V	N-Channel	90 mOhm	20 V	MOSFET (Metal Oxide)	D2PAK	175 °C	-55 °C	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	10 V
INFINEON IRF530NPBF	920 pF		100 V	4 V	N-Channel	90 mOhm	20 V	MOSFET (Metal Oxide)	TO-220AB	175 °C	-55 °C	17 A	TO-220-3	Through Hole	10 V	70 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly