
Discrete Semiconductor Products
TSM110NB04LCR RLG
ActiveTaiwan Semiconductor Corporation
MOSFET, N-CH, 40V, 54A, PDFN56 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
TSM110NB04LCR RLG
ActiveTaiwan Semiconductor Corporation
MOSFET, N-CH, 40V, 54A, PDFN56 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM110NB04LCR RLG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 54 A, 12 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1269 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerLDFN |
| Power Dissipation (Max) | 68 W, 3.1 W |
| Rds On (Max) @ Id, Vgs | 11 mOhm |
| Supplier Device Package | 8-PDFN |
| Supplier Device Package [x] | 5.2 |
| Supplier Device Package [y] | 5.75 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
| Part | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Supplier Device Package [x] | Supplier Device Package [y] | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Power - Max | Configuration | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 10 V | 11 mOhm | 12 A 54 A | 23 nC | 175 °C | -55 °C | 3.1 W 68 W | N-Channel | 40 V | MOSFET (Metal Oxide) | Surface Mount | 1443 pF | 8-PDFN | 5.2 | 5.75 | 4 V | 20 V | 8-PowerLDFN | |||
Taiwan Semiconductor Corporation | 4.5 V 10 V | 11 mOhm | 12 A 54 A | 23 nC | 175 °C | -55 °C | 3.1 W 68 W | N-Channel | 40 V | MOSFET (Metal Oxide) | Surface Mount | 1269 pF | 8-PDFN | 5.2 | 5.75 | 2.5 V | 20 V | 8-PowerLDFN | |||
Taiwan Semiconductor Corporation | 11 mOhm | 10 A 48 A | 25 nC | 155 °C | -55 °C | 40 V | MOSFET (Metal Oxide) | Surface Mount | 8-PDFN (5x6) | 4 V | 8-PowerTDFN | 2 W 48 W | 2 N-Channel (Dual) | 1506 pF | |||||||
Taiwan Semiconductor Corporation | 11 mOhm | 10 A 48 A | 23 nC | 150 °C | -55 °C | 40 V | MOSFET (Metal Oxide) | Surface Mount | 1269 pF | 8-PDFN (5x6) | 2.5 V | 8-PowerTDFN | 2 W 48 W | 2 N-Channel (Dual) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TSM110 Series
N-Channel 40 V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5.2x5.75)
Documents
Technical documentation and resources