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TAIWAN SEMICONDUCTOR TQM130NB06CR RLG
Discrete Semiconductor Products

TSM110NB04LCR RLG

Active
Taiwan Semiconductor Corporation

MOSFET, N-CH, 40V, 54A, PDFN56 ROHS COMPLIANT: YES

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TAIWAN SEMICONDUCTOR TQM130NB06CR RLG
Discrete Semiconductor Products

TSM110NB04LCR RLG

Active
Taiwan Semiconductor Corporation

MOSFET, N-CH, 40V, 54A, PDFN56 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM110NB04LCR RLG
Current - Continuous Drain (Id) @ 25°C54 A, 12 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1269 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerLDFN
Power Dissipation (Max)68 W, 3.1 W
Rds On (Max) @ Id, Vgs11 mOhm
Supplier Device Package8-PDFN
Supplier Device Package [x]5.2
Supplier Device Package [y]5.75
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V
PartDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsOperating Temperature [Max]Operating Temperature [Min]Power Dissipation (Max)FET TypeDrain to Source Voltage (Vdss)TechnologyMounting TypeInput Capacitance (Ciss) (Max) @ Vds [Max]Supplier Device PackageSupplier Device Package [x]Supplier Device Package [y]Vgs(th) (Max) @ IdVgs (Max)Package / CasePower - MaxConfigurationInput Capacitance (Ciss) (Max) @ Vds
MFG_8-PDFN(5X6)
Taiwan Semiconductor Corporation
10 V
11 mOhm
12 A
54 A
23 nC
175 °C
-55 °C
3.1 W
68 W
N-Channel
40 V
MOSFET (Metal Oxide)
Surface Mount
1443 pF
8-PDFN
5.2
5.75
4 V
20 V
8-PowerLDFN
TAIWAN SEMICONDUCTOR TQM130NB06CR RLG
Taiwan Semiconductor Corporation
4.5 V
10 V
11 mOhm
12 A
54 A
23 nC
175 °C
-55 °C
3.1 W
68 W
N-Channel
40 V
MOSFET (Metal Oxide)
Surface Mount
1269 pF
8-PDFN
5.2
5.75
2.5 V
20 V
8-PowerLDFN
8-PDFN Dual
Taiwan Semiconductor Corporation
11 mOhm
10 A
48 A
25 nC
155 °C
-55 °C
40 V
MOSFET (Metal Oxide)
Surface Mount
8-PDFN (5x6)
4 V
8-PowerTDFN
2 W
48 W
2 N-Channel (Dual)
1506 pF
8-PDFN Dual
Taiwan Semiconductor Corporation
11 mOhm
10 A
48 A
23 nC
150 °C
-55 °C
40 V
MOSFET (Metal Oxide)
Surface Mount
1269 pF
8-PDFN (5x6)
2.5 V
8-PowerTDFN
2 W
48 W
2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.29
1000$ 0.27
Digi-Reel® 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.29
1000$ 0.27
N/A 19058$ 0.60
Tape & Reel (TR) 2500$ 0.27
NewarkEach (Supplied on Cut Tape) 1$ 0.59
10$ 0.51
25$ 0.46
50$ 0.41
100$ 0.36
250$ 0.33
500$ 0.30
1000$ 0.28

Description

General part information

TSM110 Series

N-Channel 40 V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5.2x5.75)