TSM110 Series

Catalog

MOSFET N-CH 40V 12A/54A 8PDFN

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Power - Max	Configuration	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TSM110NB04CR RLG	10 V	11 mOhm	12 A 54 A	23 nC	175 °C	-55 °C	3.1 W 68 W	N-Channel	40 V	MOSFET (Metal Oxide)	Surface Mount	1443 pF	8-PDFN	5.2	5.75	4 V	20 V	8-PowerLDFN
Taiwan Semiconductor Corporation TSM110NB04LCR RLG	4.5 V 10 V	11 mOhm	12 A 54 A	23 nC	175 °C	-55 °C	3.1 W 68 W	N-Channel	40 V	MOSFET (Metal Oxide)	Surface Mount	1269 pF	8-PDFN	5.2	5.75	2.5 V	20 V	8-PowerLDFN
Taiwan Semiconductor Corporation TSM110NB04DCR RLG		11 mOhm	10 A 48 A	25 nC	155 °C	-55 °C			40 V	MOSFET (Metal Oxide)	Surface Mount		8-PDFN (5x6)			4 V		8-PowerTDFN	2 W 48 W	2 N-Channel (Dual)	1506 pF
Taiwan Semiconductor Corporation TSM110NB04LDCR RLG		11 mOhm	10 A 48 A	23 nC	150 °C	-55 °C			40 V	MOSFET (Metal Oxide)	Surface Mount	1269 pF	8-PDFN (5x6)			2.5 V		8-PowerTDFN	2 W 48 W	2 N-Channel (Dual)