Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC457QS16GE |
|---|---|
| Frequency [Max] | 2.2 GHz |
| Frequency [Min] | 1.7 GHz |
| Gain | 27 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 6 dB |
| P1dB | 29 dBm |
| Package / Case | 3.9 mm, 0.154 in |
| Package / Case | Exposed Pad, 16-SSOP |
| RF Type | General Purpose |
| Supplier Device Package | 16-QSOP-EP |
| Test Frequency | 1.9 GHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Strip | 1 | $ 27.88 | |
| 10 | $ 21.97 | |||
| 25 | $ 20.24 | |||
| 100 | $ 18.15 | |||
| 250 | $ 17.05 | |||
| 500 | $ 16.35 | |||
Description
General part information
HMC457 Series
The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.ApplicationsCDMA & W-CDMAGSM, GPRS & EdgeBase Stations & Repeaters
Documents
Technical documentation and resources
