Discrete Semiconductor Products
MJD32CT4-A
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE LOW VOLTAGE PNP POWER TRANSISTOR
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Discrete Semiconductor Products
MJD32CT4-A
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE LOW VOLTAGE PNP POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD32CT4-A |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 15 W |
| Supplier Device Package | DPAK |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MJD32CT4-A Series
The device is manufactured in planar technology with a "base island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources