Discrete Semiconductor Products

IRFB17N60K

Obsolete

MOSFET N-CH 600V 17A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 17A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB17N60K

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	99 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	340 W
Rds On (Max) @ Id, Vgs [Max]	420 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division IRFB17N50L	500 V	220 W	5 V	MOSFET (Metal Oxide)	TO-220-3	30 V	2760 pF	16 A	TO-220AB	-55 °C	150 °C	Through Hole	10 V	N-Channel	130 nC
Vishay General Semiconductor - Diodes Division IRFB17N60K	600 V	340 W	5 V	MOSFET (Metal Oxide)	TO-220-3	30 V		17 A	TO-220AB	-55 °C	150 °C	Through Hole	10 V	N-Channel		420 mOhm	99 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 17A (Tc) 340W (Tc) Through Hole TO-220AB

Technical documentation and resources